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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:28 Issue:3 Help

Comparison of On-The-Fly, DC I_{d} – V_{g} , and Single-Pulse Methods for Evaluating Threshold Voltage Instability in High- \kappa nMOSFETs

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3 Author(s)
Dawei Heh ; SEMATECH, Austin, TX ; Choi, Rino ; Bersuker, G.

Stress-induced degradation of the threshold voltage of high-kappa nMOSFETs measured by on-the-fly and single-pulse methods is investigated. It was found that the relaxation of the stress-induced threshold voltage (Vth) shift during stress interruption (sensing) time is primarily governed by the fast detrapping of charges trapped through the fast transient charging (FTC) process. Subtraction of the FTC contribution from the total stress time-dependent Vth shift provides a practical and convenient method for eliminating a major source of Vth relaxation, which results in identical lifetime estimations by the on-the-fly and pulsed methods

Published in:
Electron Device Letters, IEEE  (Volume:28 ,  Issue: 3 )

Date of Publication: March 2007

Page(s):
245 - 247
ISSN :
0741-3106
INSPEC Accession Number:
9435268
Digital Object Identifier :
10.1109/LED.2007.891275
Product Type:
Journals & Magazines
Date of Current Version :
26 February 2007
Issue Date :
March 2007
Sponsored by :
IEEE Electron Devices Society

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