By Topic

InGaP-GaAs HBT Statistical Modeling for RF Power Amplifier Designs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hu, J. ; Skyworks Solutions, Inc., Newbury Park, CA ; Zampardi, P. ; Shao, H. ; Kwok, K.
more authors

A simple statistical modeling methodology is presented for InGaP-GaAs HBTs devices and RF power amplifier circuits. The modeling approach utilizes in-line electrical parameter control data and DOE method to establish relationships between important material and model parameters. The key considerations of parameter selection are given and essential connections from device physics to model parameters are described. This statistical model allows designs that are robust to process variations and provide circuit designers with a method to de-bug design issues that can result from device variations. The authors show the background that supports this approach and demonstrate its application at both a device and circuit level

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Date of Conference:

Nov. 2006