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A High-Power Low-Distortion GaAs HBT Power Amplifier with 3.3 V Supply for 5-6 GHz Broadband Wireless Applications

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7 Author(s)
Oka, T. ; Adv. Technol. Res. Labs., Sharp Corp., Nara ; Hasegawa, M. ; Hirata, M. ; Amano, Y.
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This paper describes a 5-6 GHz band GaAs HBT power amplifier operating at 3.3 V for broadband wireless applications. In conjunction with linearizing circuit techniques, wideband matching circuits including trap circuits for 2nd harmonics allow us to achieve the high linear output power and the low distortion together with low 2nd-harmonic spurious outputs. The fabricated power amplifier exhibited linear output power levels of 21 and 22 dBm at EVM values of 2.0 and 3.0%, respectively, measured with 54 Mbps 64-QAM-OFDM signals. The 2nd harmonic spurious outputs below -35 dBc were also attained

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Date of Conference:

Nov. 2006