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Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

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13 Author(s)
Deal, W.R. ; Northrop Grumman Space & Mission Syst., Redondo Beach, CA ; Din, S. ; Radisic, V. ; Padilla, J.
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In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300-GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC

Published in:

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Date of Conference:

Nov. 2006

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