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Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits

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17 Author(s)
P. Chevalier ; STMicroelectronics, FTM - Analog & RF Advanced R&D, 850 rue Jean Monnet, F-38926 Crolles, France. pascal.chevalier@st.com ; D. Gloria ; P. Scheer ; S. Pruvost
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This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave applications. The performance of active and passive devices available on bulk Si and high-resistivity SOI is reviewed and HF characteristics of state-of-the-art SiGe HBTs and MOSFETs are compared. The performance of building blocks designed in different CMOS and BiCMOS platforms are also presented. Finally, we conclude on the suitability of different Si technologies to address such high-frequency applications

Published in:

2006 IEEE Compound Semiconductor Integrated Circuit Symposium

Date of Conference:

Nov. 2006