By Topic

Temperature Analysis of Current Crowded Effect in Power Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Wang, P.P. ; IBM Corporation Systems Development Division Kingston, N. Y. 12401

Both uniform temperature distribution and crowded temperature distribution for a large-geometry power transistor are studied. Different concepts are used for calculating these two types of temperature distribution. In the first instance, in order to calculate the uniform temperature distribution, it is assumed that the power is uniformly dissipated over the entire emitter surface. In the second instance, in calculating the crowded temperature distribution, the power dissipation is assumed to be concentrated at the edges of the emitter. The time-dependent diffusion equation is solved to calculate the temperature rises in these two cases.

Published in:

Aerospace and Electronic Systems, IEEE Transactions on  (Volume:AES-7 ,  Issue: 6 )