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SiC Schottky Diode for Use in Power Convertors

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3 Author(s)
Pikkov, M. ; Dept. of Electron., ITU, Tallinn ; Rang, T. ; Pokatilov, A.

The specification characteristics of power electronic applications can be improved by use of the recent high-speed power devices. The Schottky structure has been developed for direct type converter circuits. The description of real layout and testing methodology of an experimental sample of 4H-SiC Schottky barrier diode manufactured by diffusion welding has been given. Presented results of timing for reverse recovery time are described according to the sample of the direct current regulator

Published in:
Baltic Electronics Conference, 2006 International

Date of Conference: 2-4 Oct. 2006

Page(s):
1 - 2
ISSN :
1736-3705
E-ISBN :
1-4244-0415-0
Print ISBN:
1-4244-0414-2
INSPEC Accession Number:
9428965
Conference Location :
Tallinn
Digital Object Identifier :
10.1109/BEC.2006.311109
Product Type:
Conference Publications

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