By Topic

Static and dynamic behavior of the SiC complementary JBS structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kurel, R. ; Dept. of Electron., TTU, Tallinn ; Rang, T.

This paper presents results of simulation of SiC based complementary JBS devices. The inner processes of JBS have been investigated to get better understanding of the main parameters inside the JBS device, which have most important influence on electrical characteristics of the device and which can not be measured by traditional techniques. The best complementary solutions of JBS devices for power application are found in means of device crystal poly type (4H- versus 6H-SiC), and of Schottky contact metal work function values

Published in:

Baltic Electronics Conference, 2006 International

Date of Conference:

2-4 Oct. 2006