Static and dynamic behavior of the SiC complementary JBS structures

This paper presents results of simulation of SiC based complementary JBS devices. The inner processes of JBS have been investigated to get better understanding of the main parameters inside the JBS device, which have most important influence on electrical characteristics of the device and which can not be measured by traditional techniques. The best complementary solutions of JBS devices for power application are found in means of device crystal poly type (4H- versus 6H-SiC), and of Schottky contact metal work function values