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Clamp mode package diffusion welded power SiC Schottky diodes

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3 Author(s)
O. Korolkov ; Department of Electronics, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia, Tel. (+372)620 2155, Fax. (+372)620 2151. oleg.korolkov@ttu.ee ; N. Kuznetsova ; T. Rang

This paper is devoted to the results of a diffusion welding technique applied to solve the problem of packaging for large area SiC Schottky diodes. The forward current-voltage characteristics measured at 75 A measured for packaged diodes yields 250 A/cm2 (70A) at 1.9 V forward voltage. Reverse recovery time for packaged diodes was in the range of 29-36 ns

Published in:

2006 International Biennial Baltic Electronics Conference

Date of Conference:

2-4 Oct. 2006