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Cross-wafer controlled interface layer thickness variation, and its application to SiO2 / high-κ stack characterisation

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9 Author(s)
O'Sullivan, B.J. ; Interuniversity Micro-Electron. Centre, Leuven ; Kaushik, V.S. ; Ragnarsson, L.-A. ; Trojman, L.
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A technique has been developed to fabricate transistors using a continuously scaled 0-2.5 nm SiO2 interface layer between a silicon substrate and high-κ dielectric on a single wafer. Transistor results are promising with good mobility values and drive current. The slant etching process has no detrimental effect on the electrical characteristics of the Si/SiO2 interface. This technique provides a powerful tool to examine the effect of process variations on device performance. It has been used to demonstrate that reducing source/drain anneal temperature, from 1000degC to 700degC, results in a significant mobility degradation, for SiO2 interlayer thickness less than 1.0 nm. Above this thickness, the mobility and DIT are relatively independent of anneal temperature

Published in:

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Date of Conference:

19-21 Sept. 2006