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Monte Carlo Simulation of the Performance Dependence on Surface and Channel Orientation in Scaled pFinFETs

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2 Author(s)
Bufler, F.M. ; Inst. fur Integrierte Syst., ETH, Zurich ; Erlebach, A.

Full-band Monte Carlo simulations are performed for FinFETs with gate lengths from 50 nm down to 10 nm comparing the improvement of (110) surface pFinFETs with channel directions in lang-110rang, lang-111rang and lang001rang to the results of the standard (001)/ lang110rang CMOS configuration. Due to the reduced importance of surface scattering in (a) the undoped pFinFET channel and (b) the short-channel regime the advantage of the (110) surface orientation in long-channel bulk pMOSFETs vanishes in the scaling limit, while the (001) channel direction becomes more beneficial. Consequently, our device simulation analysis suggests that a (-110) wafer with (110)/lang001rang pFinFETs and (00-l)/lang001rang nFinFETs is superior to a (00-1) wafer with (110)/ lang-100rang pFinFETs and (010)/lang-100rang nFinFETs in the ultrashort-channel regime

Published in:

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Date of Conference:

Sept. 2006

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