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Independent-Gate Controlled Asymmetrical SRAM Cells in Double-Gate MOSFET Technology for Improved READ Stability

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3 Author(s)
Jae-Joon Kim ; IBM T. J. Watson Res. Center, Yorktown Heights, NY ; Keunwoo Kim ; Ching-Te Chuang

This paper presents novel asymmetrical SRAM cell topologies in double-gate technology. These cells utilize the independent-gate control to overcome the limitation of conventional device sizing for stability improvement in asymmetrical SRAM cells. We show that optimal READ stability, where the READ stability approaches the HOLD stability, can be achieved with the proposed scheme. Mixed-mode device/circuit simulations show that the proposed cell has 1.9X stability improvement over conventional SRAM and 1.5X stability improvement over asymmetrical SRAM with device sizing only

Published in:

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Date of Conference:

Sept. 2006