An improved analytical AC large-signal model for the GaAs MESFET

An improved analytical AC large-signal model for a MESFET is presented. The model is an upgrading of a previously presented model. The improvement is basically in the expressions for the conduction current. Simulation results are presented and compared to measured data. The calculated gain and power are slightly greater than the measured values. This is expected, since the matching networks have some loss, which is not included in the calculation. The loss in the input matching network can be appreciable due to the large transformation ratio.<
>