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Simulation of InGaN/GaN multiple quantum well light-emitting diodes with Quantum Dot electrical and optical effects

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4 Author(s)
Xia, C.S. ; Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci. ; Lu, W. ; Simon Li, Z.M. ; Li, Z.M.S.

We report on the 2D simulations of electrical and optical characteristics for green color InGaN/GaN multiple quantum well light-emitting diodes by the APSYS software. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered with quantum dot model. The simulation results are in good agreement with experiment and indicate that quantum dot spontaneous emission and non-equilibrium quantum transport play an important role in the InGaN/GaN multiple quantum well light-emitting diodes

Published in:

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Date of Conference:

Sept. 2006

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