Referenced Items are not available for this document.
As microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s)
Published in:
Integrated Reliability Workshop Final Report, 2006 IEEE International
Date of Conference: Oct. 16 2006-Sept. 19 2006
- Page(s):
- 156 - 159
- ISSN :
- 1930-8841
- E-ISBN :
- 1-4244-0297-2
- Print ISBN:
- 1-4244-0296-4
- INSPEC Accession Number:
- 9462427
- Conference Location :
- South Lake Tahoe, CA
- Digital Object Identifier :
- 10.1109/IRWS.2006.305234
- Product Type:
- Conference Publications
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