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A 0.18μm CMOS LNA for UHF-RFID Reader Application

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4 Author(s)
Yuan-ying Chen ; Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai ; Run-xi Zhang ; Chun-qi Shi ; Zong-sheng Lai

CMOS technologies are widely exploited in the area of GHz RF circuits as well as in the area of baseband circuits. Accordingly, CMOS LNA is gaining its popularity from applications such as GSM, PCS, and WLAN. In this paper, a novel low power consumption and high gain LNA for UHF-RFID (ultra high frequency-radio frequency identification) reader is presented. Basic analysis is introduced using those equations derived. Using these analyses, the stack style single-end structure with LC resonator using on-chip spiral inductor is investigated. This LNA exhibits power gain about 20.4dB and noise figure of 1.6dB while drawing 1mA current from 1.8V supply voltage under TSMC 0.18mum RF-CMOS process. The reverse isolation is about -36.7 dB

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Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

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