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Low phase noise 5 GHz VCOs in 0.13 /spl mu/m SOI and bulk CMOS

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5 Author(s)
Sanderson, D.I. ; IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY ; Jonghae Kim ; Xudong Wang ; Trzcinski, R.E.
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This paper present 5 GHz LC VCO designs fabricated in 0.13 mum SOI and bulk CMOS process technologies. Technology advantages, considerations, and trade-offs are compared for high performance VCO design. A methodology for designing a low FOM VCO is given. The SOI VCO achieves a phase noise of -131 dBc/Hz at a 1 MHz offset and consumes 6 mW. The bulk VCO has a phase noise of -132 dBc/Hz at a 1 MHz offset and draws 6.2 mW. Both of these VCOs achieve a FOM value of nearly -200 dBc/Hz

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006