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On the giant optical anisotropy observed in M-plane GaN/AlGaN quantum wells by crystal-field effect

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4 Author(s)
C. n. Chen ; Dept. of Electron. Eng., Far-East Coll., Tainan ; K. F. Yarn ; S. h. Chang ; M. l. Hung

Optical polarizations of GaN/AlGaN wurtzite quantum wells in various orientations are studied using an arbitrarily-oriented [hkil] Hamiltonian potential matrix. The optical matrix elements in the wurtzite quantum wells are calculated using the k-p finite difference scheme. The results reveal the presence of giant in-plane optical anisotropy (polarized normal to [0001]) in the M-plane (i.e. the (10 1macr 0)-oriented layer plane) GaN/Al0.2Ga0.8N quantum well due to the positive crystal-field split energy effect (DeltaCR > 0). Presented theoretical results are consistent with the photoluminescence measurements presented in the literature

Published in:

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Date of Conference:

Oct. 2006