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Analysis of Self-Heating in Poly-Si Thin-Film Transistors and Circuits by a Self-Consistent Electro-Thermal Simulation Approach

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2 Author(s)
Xiaojun Guo ; Adv. Technol. Inst., Surrey Univ., Guildford ; Silva, S.R.P.

This paper investigated the self-heating effects in poly-Si thin-film transistors (TFTs) and circuit(s) by using a self-consistent electro-thermal simulation approach. The analysis indicates that, for the poly-Si technology, self-heating may lead to a significant degradation of the device's characteristics, and severely impact the circuit performance; therefore, reinforce the need for effective cooling strategies and also accurate device/circuit level models, including electro-thermal coupling effects, for reliable poly-Si TFT circuit design and integration

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006