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Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications

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12 Author(s)
Ezaki, T. ; Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ. ; Warabino, T. ; Miyake, M. ; Sadachika, N.
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We have developed MOSFETs noise models for the 1/f, thermal and induced-gate noise based on self-consistent surface-potential description. Consideration of non-uniform mobility and carrier distributions arising from the surface potential distribution along the channel is indispensable for accurate noise modeling for RF applications. The developed noise models are implemented in the complete surface-potential based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model) for circuit simulations

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006

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