By Topic

Leakage Power Modeling Method for SRAM Considering Temperature, Supply Voltage and Bias Voltage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Feng Zhang ; Dept. of Electron. Eng., Tsinghua Univ., Beijing ; Rong Luo ; Yongpan Liu ; Hui Wang
more authors

In this paper, an accurate power estimation method for SRAM memories based on structures is proposed. Furthermore, based on this power estimation method, a leakage power model for SRAM considering temperature, supply voltage and bias voltage is also proposed. Its maximum error is within 7%

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006