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Leakage Power Modeling Method for SRAM Considering Temperature, Supply Voltage and Bias Voltage

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5 Author(s)
Feng Zhang ; Dept. of Electron. Eng., Tsinghua Univ., Beijing ; Rong Luo ; Yongpan Liu ; Hui Wang
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In this paper, an accurate power estimation method for SRAM memories based on structures is proposed. Furthermore, based on this power estimation method, a leakage power model for SRAM considering temperature, supply voltage and bias voltage is also proposed. Its maximum error is within 7%

Published in:

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Date of Conference:

23-26 Oct. 2006