By Topic

Investigation of GaAs Wafer Surface Blistering by Hydrogen Implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yu-lin Guo ; Dept. of Microelectron., Fudan Univ., Shanghai ; Jia Zhou ; Shi-yang Zhu ; Yi-ping Huang

The surface blistering of the 6 times 1016 cm-2 dose hydrogen ion implanted GaAs wafers were investigated as a function of temperature and time during the rapid thermal annealing, as well as the implant energy. For the 50keV implanted samples, the blisters (microcavities) start to form and crack at a temperature larger than 300degC. The blister density increases rapidly with increasing the annealing temperature at first, and then saturates at temperature larger than 500degC. The size of craters, which are the cracked microcavities, seems to be independent of the annealing temperature. With increasing the implant energy, the critical temperature to trigger blistering increases, meanwhile, the blister density decreases and the average crater size increases. The results of this study may be useful to optimize the Smart-Cut process for the GaAs/Si fabrication

Published in:

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Date of Conference:

23-26 Oct. 2006