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Enhancement Mode pHEMT LNA with Super Low Noise and High Gain for S Band Application

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4 Author(s)
Hua Huang ; Inst. of Microelectron., Chinese Acad. of Sci., Beijing ; Hai-Ying Zhang ; Jun-Jian Yin ; Tian-Chun Ye

A monolithic low noise amplifier has been developed for S band telecommunication system, using enhancement mode pHEMT technology with gate-length of 0.5mum. The LNA which approach the noise performance of discrete designs shows a 50Omega noise figure less than 1.0dB, gain greater than 28dB, return loss less than -10dB and more than 10dBm output power at 1dB compression point from 3.0 to 3.6 GHz. A good agreement between measured and simulated data had been achieved. These results are attributed to the low noise performance of the enhancement mode pHEMT and minimized parasitic resistance of the input match network

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006