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Improved Program Mode for Memory Array Based on Ferroelectric-Gate Field-Effect Transistor

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7 Author(s)
W. f. Li ; Shenzhen Graduate Sch., Peking Univ., Shenzhen ; J. f. Kang ; X. y. Liu ; G. Du
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An improved program mode for memory array based on ferroelectric field effect transistor (Fe-FET) is proposed. A SPICE macro-model for the transfer characteristics of Fe-FET devices, based on the Schmitt trigger circuit, is demonstrated and applied to circuit simulation. The simulation results show that, compared to the conventional program mode, the improved program mode can effectively reduce the requirements for the performance of Fe-FET, and consequently enhance the operation robustness of the Fe-FET based memory array circuit, as well as extend the design window

Published in:

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Date of Conference:

23-26 Oct. 2006