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Novel HfAIO charge trapping layer in SONOS type flash memory for multi-bit per cell operation

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2 Author(s)
Gang Zhang ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore ; Won Jong Yoo

A HfAlO charge storage layer in SONOS (polysilicon-oxide-silicon nitride-oxide-silicon) type memory for multi-bit per cell operation by channel hot electron injection (CHEI) programming and hot hole injection (HHI) erase with a SiO2/HfAlO/SiO2 structure is proposed. Compared to conventional NROM, HfAlO shows the advantages of high speed program/erase of HfO2 as well as good charge retention and high crystallization temperature of Al2O3 , which makes HfAlO a very promising candidate for the charge storage layer. Excellent 2-bit per cell property with good 10-year charge retention is demonstrated from the charge retention tests, as well as the programming/erasing operations

Published in:
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference: 23-26 Oct. 2006

Page(s):
781 - 783
E-ISBN :
1-4244-0161-5
Print ISBN:
1-4244-0160-7
INSPEC Accession Number:
9408504
Conference Location :
Shanghai
Digital Object Identifier :
10.1109/ICSICT.2006.306485
Product Type:
Conference Publications

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