Cart (Loading....) | Create Account
Close category search window
 

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yuncheng Song ; Inst. of Microelectron., Peking Univ., Beijing ; Zhiliang Xia ; Jinfeng Yang ; Gang Du
more authors

We propose a self-consistent method to simulate charge trapping and de-trapping in charge storage layer and its interfaces of SONOS type flash memory devices. This method can be used under various applied voltages; in various structures composed of multiple material, thickness and shape of gate stack layers. It can also work with arbitrary trap density distribution in either real space or energy space. Further more, the self-consistent method has enough flexibility to accommodate detailed physical models

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

Oct. 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.