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Endurance Characteristics of SuperFlash® Memory

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8 Author(s)
Xian Liu ; Silicon Storage Technol. Inc., Sunnyvale, CA ; Markov, V. ; Kotov, A. ; Tho Ngoc Dang
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Program/erase endurance characteristics of split-gate SuperFlashreg memory cells are discussed. Various factors which affect memory endurance, including cycling data pattern, cycling frequency, temperature, erase retries, and technology scaling, are investigated. Superior data retention after endurance cycling is demonstrated

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006