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Analysis of 1/f noise for CMOS with high-k gate dielectrics

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8 Author(s)
Ohguro, T. ; Center for Semicond. Res. & Dev., Toshiba Corp. Semicond. Co., Yokohama ; Kojima, K. ; Iijima, R. ; Watanabe, T.
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HfSiON is one of the most promising alternative gate dielectric materials for low standby power (LSTP) application. Recently, DC performance, gate leakage current, and reliability have been reported. However, study of analog performances of CMOS with HfSiON gate dielectrics is not sufficient. In this paper, the authors discuss 1/f noise and matching of CMOS with HfSiON gate dielectrics and predict trends in Svg with technology scaling according to the ITRS roadmap based on Mikoshiba's model

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006

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