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Controllability of flatband voltage in high-k gate stack structures - remarkable advantages of La/sub 2/O/sub 3/ over HfO/sub 2/

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17 Author(s)
Ohmori, K. ; Adv. Electron. Mater. Center, Nat. Inst. for Mater. Sci., Tsukuba ; Ahmet, P. ; Shiraishi, K. ; Yamabe, K.
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The authors have achieved a remarkably wide range (~1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. The authors consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. The authors believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006