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X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfaces

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4 Author(s)
Hirose, K. ; Inst. of Space & Astronaut. Sci., JAXA, Sagamihara ; Nohira, H. ; Kobayashi, D. ; Hattori, T.

The authors propose a new method to estimate the local dielectric constant of an ultrathin gate insulator film formed on Si substrates by using X-ray photoelectron spectroscopy (XPS). First the authors measure the difference of core-level binding energy shifts for Si 1s and Si 2p, DeltaE1s DeltaE2p, for various Si compounds using high-resolution high-energy synchrotron radiation. the authors find that the DeltaE1s - DeltaE2p values are in very good correlation with the dielectric constant values of the Si compounds. Then, using this relation, the authors deduce the local dielectric constant for ultrathin SiO2 film formed on Si substrates. The results are in good agreement with values predicted by a first-principles calculation

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006