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Optimizing post cleaning of Tungsten contact CMP to improve the yield of logic products with copper interconnect

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1 Author(s)

Higher yield loss caused by Ml-bridge was found in sub 130nm logic products with multi-level copper interconnect. With the help of FIB, SEM and EDX, the organic surface particle induced during W CT-CMP was considered to result in the Ml-bridge, and then the mechanism of the Ml-bridge was analyzed. Through partition check on post CMP cleaner to reduce the organic particle contamination, it was found that Brush 2 with HF spraying and closed mechanical scrubbing directly induced the organic surface particles, so the Brush 2 was optimized to be open. In addition, combined to optimizing on Mega tank and Brush 1, the defect count was effectively reduced for W CT-CMP, and thus the yield on 130nm logic products were verified to be improved greatly

Published in:

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Date of Conference:

Oct. 2006