By Topic

Optimization of excimer laser annealing on low temperature polysilicon for thin film transistor applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Cheng, T.C. ; Dept. of Electron. Eng., Southern Taiwan Univ. of Technol., Tainan ; Chang, W.C. ; Yarn, K.F. ; Lo, C.F.
more authors

Excimer laser annealing (ELA) amorphous silicon (a-Si) to poly-silicon (poly-Si) in different gas environment, i.e. N2 or N2 mixed O2:2%, is studied for the fabrication of thin film transistors (TFTs). Influence of laser power on the surface morphology, grain size and height of gibbous grain is investigated. The variation of threshold laser power for the generation of surface ablation in N2 and N2:98% mixed O2:2% environment is also discussed. From experiment, it is found that the combination of O2:2% enhance the threshold laser power for the generation of surface ablation from 320mJ/cm2 to 390mJ/cm 2. In the condition of average grain over 0.25mum, the process window is 30mJ/cm2for N2, but is 50mJ/cm 2 for N2 mixed O2:2% environment

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006