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High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal process

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7 Author(s)
Q. C. Zhang ; Dept. of Electr. & Comput. Eng., Singapore Nat. Univ. ; J. D. Huang ; N. Wu ; G. X. Chen
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Gate-first self-aligned Ge nMOSFET and pMOSFET with metal gate and CVD HfO2 have been successfully fabricated, using a novel laser thermal process (LTP) S/D activation. Compared with conventional rapid thermal annealing (RTA) activation, LTP provides smaller S/D series resistance with shallower junction depth while maintaining good gate stack integrity. Much improved drive current is obtained on Ge nMOSFET. A high hole mobility (1.9times of universal Si/SiO2) is also achieved on Ge pMOSFET

Published in:

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Date of Conference:

23-26 Oct. 2006