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Strained-si and advanced channel materials on insulator: challenges and opportunities

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1 Author(s)
Cheng, Zhi-Yuan ; AmberWave Syst. Corp., Salem, NH

Integration of advanced high transport channel materials into Si-based CMOS devices holds great promises for CMOS scaling beyond Moore's Law. In this article, various heteroepitaxy approaches and structures for advanced channel material fabrication in "on-insulator" structures was discuss, including both global and localized epitaxy techniques with strained-Si, Ge, III-V etc. The limits, challenges and potential opportunities are addressed

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006