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Investigation of nanowire orientation and embedded Si1-xGex source/drain influence on Twin Silicon Nano-Wire Field Effect Transistor (TSNWFET)

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7 Author(s)
Ming Li ; R&D Center, Samsung Electron. Co., Kyungki-Do ; Sung Dae Suk ; Kyoung Hwan Yeo ; Yun-young Yeoh
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This paper describes TSNWFET devices with embedded Si1-xGex source/drain regions and different nanowire orientations. Thick Si1-xGex embedded source/drain and lang110rang channel orientation is found effective to enhance p-channel TSNWFET performance, while cause degradation for n-channel one. Thin Si1-xGex and lang100rang channel orientation is the preferred combination for keeping n-TSNWFET performance. With lang110rang channel orientation and thick Si1-xGex in source/drain, p-MOS current, for the first time, is even observed to exceed its n-type counterpart from the experiments

Published in:

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Date of Conference:

Oct. 2006