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A review of the SOI four-gate transistor

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3 Author(s)
Cristoloveanu, S. ; Inst. of Microelectron., IMEP, Grenoble ; Akarvardar, K. ; Gentil, P.

Recent results on the characterization and applications of the SOI four-gate transistor (G4-FET) are reviewed. The advantages provided by four independent gates are discussed by distinguishing different operation modes: volume (depletion-all-around) and surface conduction. Several examples highlight the potential of the G4-FET for analog applications

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006

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