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Critical technology issues for deca-nanometer MOSFETs

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6 Author(s)
Ostling, M. ; Sch. of Inf. Technol., R. Inst. of Technol., Kista ; Malm, B.G. ; von Haartman, M. ; Hallstedt, J.
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An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-K gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed

Published in:

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Date of Conference:

23-26 Oct. 2006