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Sub-6F2 Charge Trap Dynamic Random Access Memory Using a Novel Operation Scheme

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6 Author(s)
ZongLiang Huo ; Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD., San#24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do, Korea 449-711. Phone: +82-31-209-8630, FAX: +82-31-209-6299, E-mail: zongliang.huo@samsung.com ; Seung Jae Baik ; Shieun Kim ; In-Seok Yeo
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For the first time, we have demonstrated the feasibility of charge trap-based devices with ultra-thin tunnel oxide for high density DRAM application. Experimental results using direct tunneling scheme show good memory characteristics such as long retention time (>1000sec), large memory window (>1V), non-destructive read, high endurance, and acceptable programming speed (~100ns). Further improvement for low operation voltage and sub-6F2 cell size can be achieved by adopting a novel hot electron injection method. This novel operation scheme is helpful for efficient programming and minimizing disturbance. Due to the simple and fully logic compatible process, charge trap DRAM is considered to be a good candidate for future high-density DRAM and SOC applications

Published in:

Device Research Conference, 2006 64th

Date of Conference:

26-28 June 2006

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