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A field-programmable antifuse memory for RFID on plastic

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2 Author(s)
Mattis, B. ; University of California, Berkeley, EECS Department, Berkeley, California, 94720-1770. phone: (510)643-4232, email: bmattis@eecs.berkeley.edu ; Subramanian, Vivek

We demonstrate an integrated field-programmable nonvolatile memory technology on plastic, thus realizing a low-cost memory technology for systems on plastic such as RFID tags and sensors that require post-fabrication encoding with unique ID numbers. The crossbar memory array is integrated with steering diodes for every memory element, thus ensuring excellent addressability and scalability to large array sizes. Pentacene-aluminum schottky diodes were combined with a polyvinylphenol (PVP) dielectric to create field programmable nonvolatile memory crossbar arrays on a flexible PEN substrate. Our devices show high programmed/unprogrammed current margins (up to 10,000) at read voltages of 6V. Programming voltages are >20V, providing excellent read-write margin.

Published in:

Device Research Conference, 2006 64th

Date of Conference:

26-28 June 2006