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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:36 Issue:12 Help

High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film

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6 Author(s)
Sera, K. ; NEC Corp., Kawasaki, Japan ; Okumura, F. ; Uchida, H. ; Itoh, S.
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High-performance staggered a-Si:H and poly-Si thin-film transistors (TFTs) fabricated by XeCl excimer laser annealing of a-Si:H films are discussed. The field-effect mobility of poly-Si TFT is 102 cm 2/V-s, and that of a-Si:H TFT is 0.23 cm2/V-s. Their drain current on/off ratios are over 106. Except for the crystallization, the fabrication process was the same for both of them. This process appears extremely promising for the integration of matrix elements and peripheral drivers in a single substrate

Published in:
Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 12 )

Date of Publication: Dec 1989

Page(s):
2868 - 2872
ISSN :
0018-9383
INSPEC Accession Number:
3606033
Digital Object Identifier :
10.1109/16.40970
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1989
Sponsored by :
IEEE Electron Devices Society

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