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The emitter-base interface current in silicon bipolar transistors with emitters deposited by plasma-enhanced CVD

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3 Author(s)
J. Symons ; IMEC, Leuven, Belgium ; J. Nijs ; R. P. Mertens

The DC characteristics of bipolar devices with emitters deposited by the glow discharge of silane are discussed. The emitter material can be amorphous or single crystalline, grown by low-temperature plasma epitaxy. At deposition temperatures as low as 320°C, surface cleaning is the most critical step in the process. Results on different ex-situ and in-situ cleanings are included. A model for the base current of bipolar transistors which is in agreement with the observations is proposed. It is shown that the base-emitter interface limits the transistor performance. After optimization, diode ideality factors approaching unity are obtained

Published in:

IEEE Transactions on Electron Devices  (Volume:36 ,  Issue: 12 )