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GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

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6 Author(s)
P. M. Asbeck ; Rockwell Int. Sci. Center, Thousand Oaks, CA, USA ; M. -C. F. Chang ; J. A. Higgins ; N. H. Sheng
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Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) and their prospects for application in various areas are discussed. The microwave and digital performance status of HBTs is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted

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IEEE Transactions on Electron Devices  (Volume:36 ,  Issue: 10 )