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High frequency (f=2.37 GHz) room temperature operation of 1.55 μm AlN/GaN-based intersubband detector

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5 Author(s)
Giorgetta, F.R. ; Inst. of Phys., Univ. of Neuchatel ; Baumann, E. ; Guillot, F. ; Monroy, E.
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The fabrication and high frequency operation of a room temperature 1.55 mum intersubband detector based on a regular AlN/GaN superlattice is reported. This photovoltaic device was capable of detecting a sinusoidally modulated laser beam at high frequencies of up to 2.37 GHz

Published in:

Electronics Letters  (Volume:43 ,  Issue: 3 )