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Waveguide Integrated Ge p-i-n Photodetectors on a Silicon-on-Insulator Platform

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18 Author(s)
J.F. Liu ; Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA ; D. Ahn ; C. Y. Hong ; D. Pan
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We present selectively grown Ge p-i-n photodetectors coupled to high index contrast Si(core)/SiO2(cladding) waveguides on a silicon-on-insulator (SOI) platform. Two coupling schemes, namely butt-coupling and vertical coupling, were demonstrated in this study. With the butt-coupling scheme we have achieved a high responsivity of 1.0 A/W at 1520 nm and a 3 dB bandwidth greater than 4.5 GHz at 1550 nm. With the vertical coupling scheme, where the light couples from a Si waveguide evanescently to the Ge detector on top of it, a responsivity of 0.22 A/W and a 3 dB bandwidth of ~1.5 GHz have been demonstrated at 1550 nm. The devices were fabricated on a standard 180 nm industrial complementary metal oxide semiconductor production (CMOS) line, and can be integrated with CMOS circuitry for electronic and photonic integrated circuits

Published in:

Optoelectronics, 2006 Optics Valley of China International Symposium on

Date of Conference:

Nov. 2006