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Geometry-Dependent Quality Factors in Ba0.5Sr0.5TiO3 Parallel-Plate Capacitors

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2 Author(s)
Pervez, N.K. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA ; York, R.A.

Quality factor variation with top electrode area in thin-film barium-strontium-titanate parallel-plate capacitors is discussed. At low frequencies, the geometry dependence is consistent with the presence of a parallel parasitic loss pathway enabled by conduction over the device mesa surface. At high frequencies, the variation in the quality factor with top electrode area is due to a geometry-independent series resistance

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:55 ,  Issue: 2 )

Date of Publication:

Feb. 2007

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