Referenced Items are not available for this document.
A design approach and test data for a broadband high-power amplifier monolithic microwave integrated circuit (MMIC) developed using MSAG MESFETs with multilevel-plating technology are presented. A low-loss matching design technique was used in the development of a two-stage amplifier. The UHF/L/S-band amplifier has exhibited greater than 12-W power output and better than 22% power-added efficiency over the 0.7-2.7-GHz frequency range. To our knowledge, these power results represent the state-of-the-art in multioctave high-power MMIC amplifiers
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:55
,
Issue:
2
)
Date of Publication: Feb. 2007
- Page(s):
- 222 - 229
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 9292140
- Digital Object Identifier :
- 10.1109/TMTT.2006.889151
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 05 February 2007
- Issue Date :
- Feb. 2007
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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