By Topic

0.7–2.7-GHz 12-W Power-Amplifier MMIC Developed Using MLP Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Bahl, I.J. ; Integrated Products Bus. Unit, M/A-COM, Roanoke, VA

A design approach and test data for a broadband high-power amplifier monolithic microwave integrated circuit (MMIC) developed using MSAG MESFETs with multilevel-plating technology are presented. A low-loss matching design technique was used in the development of a two-stage amplifier. The UHF/L/S-band amplifier has exhibited greater than 12-W power output and better than 22% power-added efficiency over the 0.7-2.7-GHz frequency range. To our knowledge, these power results represent the state-of-the-art in multioctave high-power MMIC amplifiers

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:55 ,  Issue: 2 )