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Proposal for Q-Modulated Semiconductor Laser

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1 Author(s)
Jian-Jun He ; Dept. of Opt. Eng., Zhejiang Univ., Hangzhou

A novel structure and mechanism for high-speed modulation of semiconductor lasers are proposed and analyzed. The modulator consists of an antiresonant cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the reflectivity of the rear reflector, and consequently the Q-factor, the lasing threshold, and the output power. An implementation structure and numerical results for a Q-modulated distributed feedback laser are presented. The monolithically integrated Q-modulated laser has potential advantages of high speed, low wavelength chirp, high extinction ratio, and high power efficiency

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 5 )