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Novel 1.3 μm MQW light-emission-and-detection diode with flat responsivity characteristics

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5 Author(s)
Suzaki, Y. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Tohmori, Y. ; Matsumoto, S. ; Kishi, K.
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A novel 1.3 μm MQW light-emission-and-detection diode including a bulk detection layer is proposed for use in time-compression-multiplexing transmission systems. In the lasing mode, this diode has a threshold current of 9 mA at 25°C and a maximum output power of >10 mW at 85°C. In the detection mode, the polarisation dependence of its responsivity, as a detection operation, is <0.5 dB and the wavelength dependence of the responsivity is only 1dB at a wavelength 35 nm longer than the lasing wavelength

Published in:

Electronics Letters  (Volume:31 ,  Issue: 16 )