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1.3 μm waveguided electroabsorption modulators with strain-compensated InAsP/InGaP MQW structures

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4 Author(s)
Wakita, K. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Kotaka, I. ; Amano, T. ; Sugiura, H.

High-quality multiquantum well (MQW) structures with 1.5% compressive strain in InAsP wells and 0.8% tensile strain in InGaP barriers have been grown by gas-source molecular beam epitaxy on InP substrates. High-speed (3 dB bandwidth over 10 GHz) and low driving voltage (lower than 3 V for 20 dB on/off ratio) operation using these structure is demonstrated. These characteristics are the first reported for MQW modulators operating at 1.3 μm

Published in:

Electronics Letters  (Volume:31 ,  Issue: 16 )