Referenced Items are not available for this document.
High-quality multiquantum well (MQW) structures with 1.5% compressive strain in InAsP wells and 0.8% tensile strain in InGaP barriers have been grown by gas-source molecular beam epitaxy on InP substrates. High-speed (3 dB bandwidth over 10 GHz) and low driving voltage (lower than 3 V for 20 dB on/off ratio) operation using these structure is demonstrated. These characteristics are the first reported for MQW modulators operating at 1.3 μm
Published in:
Electronics Letters
(Volume:31
,
Issue:
16
)
Date of Publication: 3 Aug 1995
- Page(s):
- 1339 - 1341
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5046502
- Digital Object Identifier :
- 10.1049/el:19950949
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 3 Aug 1995
- Sponsored by :
- Institution of Engineering and Technology
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
